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康华尔电子成立至今已有20多年,是国内数一数二的晶振厂家0755-27838351,专业研发生产销售石英晶振,32.768K晶振,石英晶体谐振器,贴片晶振,SAW滤波器等.采用无铅环保材料生产,具有精度稳定,小体积,重量轻等特点.国产晶振就选康华尔电子,质量好,精度高,价格优势.
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有源晶振是一款自身带有电源电压功能的石英晶体振荡器,并且有多种电压供选择,比如有1.8V,2.5V,3.3V,3.8V,5V等高速自动安装和高温回流焊设计,Optionable待机输出三态输出功能,电源电压范围：1.8V~5 V,高稳定性,低抖动,低功耗,主要应用领域:无线通讯,高端智能手机,平板笔记本WLAN,蓝牙,数码相机,DSL和其他IT产品的晶振应用,三态功能,PC和LCDM等高端数码领域,符合RoHS/无铅.
频率：100MHZ
尺寸：5.00mmx3.20mm
511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振，尺寸为5.00mmx3.20mm，频率100MHZ，电压为2.5V，频率稳定性20ppm.输出为LVDS，Silicon Crystal，Silicon有源振荡器，差分晶振LVDS，低功耗振荡器，有源贴片晶振，XO时钟振荡器，SMD振荡器，低电压晶振，低相噪振荡器，低相位差分晶振，低抖动差分晶振，Si510/511 XO采用了Skyworks Solutions公司先进的DSPLL技术提供从100千赫到250兆赫的任何频率。不像传统的XO其中每个输出频率需要不同的晶体，Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器在这个范围内产生任何频率。
这解决方案提供卓越的电源噪声抑制，简化低抖动时钟在嘈杂的环境中产生。晶体ESR和DLD是独立的生产测试，以保证性能和提高可靠性。Si510/511差分晶体振荡器可在工厂配置，适用于各种用户规格;包括频率、电源电压、输出格式、输出使能极性、和稳定性。特定的配置是在出厂时编程的运输，消除了漫长的交货期和非经常性的工程费用与自定义频率振荡器相关联。511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振.
511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振，尺寸为5.00mmx3.20mm，频率100MHZ，电压为2.5V，频率稳定性20ppm.输出为LVDS，Silicon Crystal，Silicon有源振荡器，差分晶振LVDS，低功耗振荡器，有源贴片晶振，XO时钟振荡器，SMD振荡器，低电压晶振，低相噪振荡器，低相位差分晶振，低抖动差分晶振，Si510/511 XO采用了Skyworks Solutions公司先进的DSPLL技术提供从100千赫到250兆赫的任何频率。不像传统的XO其中每个输出频率需要不同的晶体，Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器在这个范围内产生任何频率。
这解决方案提供卓越的电源噪声抑制，简化低抖动时钟在嘈杂的环境中产生。晶体ESR和DLD是独立的生产测试，以保证性能和提高可靠性。Si510/511差分晶体振荡器可在工厂配置，适用于各种用户规格;包括频率、电源电压、输出格式、输出使能极性、和稳定性。特定的配置是在出厂时编程的运输，消除了漫长的交货期和非经常性的工程费用与自定义频率振荡器相关联。511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振.
511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | |||||||||||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | |||||||||||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | |||||||||||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | |||||||||||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | |||||||||||||||||||
| OE "1" Setting | VIH | See Note | 0.80 x V DD | — | — | V | |||||||||||||||||
| OE "0" Setting | VIL | See Note | — | — | 0.20 x V DD | V | |||||||||||||||||
|
OE Internal Pull-Up/Pull- Down Resistor* |
RI | — | 45 | — | kΩ | ||||||||||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | |||||||||||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | |||||||||||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | |||||||||||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | |||||||||||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | |||||||||||||||||||
| OE "1" Setting | VIH | See Note | 0.80 x V DD | — | — | V | |||||||||||||||||
| OE "0" Setting | VIL | See Note | — | — | 0.20 x V DD | V | |||||||||||||||||
|
OE Internal Pull-Up/Pull- Down Resistor* |
RI | — | 45 | — | kΩ | ||||||||||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
|
CMOS Output Logic High |
V OH | 0.85 x V DD | — | — | V | ||||||||||||||||||
|
CMOS Output Logic Low |
VOL | — | — | 0.15 x V DD | V | ||||||||||||||||||
|
CMOS Output Logic High Drive |
I OH | 3.3 V | –8 | — | — | mA | |||||||||||||||||
| 2.5 V | –6 | — | — | mA | |||||||||||||||||||
| 1.8 V | –4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Logic Low Drive |
I OL | 3.3 V | 8 | — | — | mA | |||||||||||||||||
| 2.5 V | 6 | — | — | mA | |||||||||||||||||||
| 1.8 V | 4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Rise/Fall Time (20 to 80% V DD) |
TR/T F |
0.1 to 212.5 MHz, CL = 15 pF |
0.45 | 0.8 | 1.2 | ns | |||||||||||||||||
|
0.1 to 212.5 MHz, CL = no load |
0.3 | 0.6 | 0.9 | ns | |||||||||||||||||||
|
LVPECL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 565 | ps | ||||||||||||||||||
|
HCSL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 470 | ps | ||||||||||||||||||
|
LVDS Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 350 | — | 800 | ps | ||||||||||||||||||
|
LVPECL Output Common Mode |
VOC |
50 Ω to V DD – 2 V, single-ended |
— |
V DD – 1.4 V |
— | V | |||||||||||||||||
| LVPECL Output Swing | VO |
50 Ω to V DD – 2 V, single-ended |
0.55 | 0.8 | 0.90 | VPPSE | |||||||||||||||||
|
LVDS Output Common Mode |
VOC |
100 Ω line-line V DD= 3.3/2.5 V |
1.13 | 1.23 | 1.33 | V | |||||||||||||||||
| 100 Ω line-line, V DD= 1.8 V | 0.83 | 0.92 | 1.00 | V | |||||||||||||||||||
| LVDS Output Swing | VO |
Single-ended, 100 Ω differential termination |
0.25 | 0.35 | 0.45 | VPPSE | |||||||||||||||||
|
HCSL Output Common Mode |
VOC | 50 Ω to ground | 0.35 | 0.38 | 0.42 | V | |||||||||||||||||
| HCSL Output Swing | VO | Single-ended | 0.58 | 0.73 | 0.85 | VPPSE | |||||||||||||||||
| Duty Cycle | DC | All formats | 48 | 50 | 52 | % | |||||||||||||||||
511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振 尺寸图
OscillatorCrystal产品特性：
支持来自的任何频率100kHz至250MHz
低抖动操作
完全稳定包括10年老化
全面的生产测试
覆盖范围包括晶体ESR和DLD片内LDO电源调节器
电源噪声滤波 3.3、2.5或1.8V工作电压差异(LVPECL，LVDS， HCSL)或CMOS输出选项
可选集成1:2CMOS扇出缓冲器
OE上的不良抑制和通电
行业标准5x7、3.2x5、 和2.5x3.2毫米封装
无铅，符合RoHS标准
–40至85摄氏度操作
更多相关Silicon晶振型号
| Manufacturer Part Number原厂代码 | Manufacturer品牌 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
| 511BBA148M500AAG | Silicon Labs | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511FBA200M000BAG | Silicon Labs | Si511 | 200MHz | 2.5V | ±25ppm |
| 510BBA200M000BAG | Silicon Labs | Si510 | 200MHz | 3.3V | ±25ppm |
| 511FBA200M000AAG | Silicon Labs | Si511 | 200MHz | 2.5V | ±25ppm |
| 511ABA25M0000BAG | Silicon Labs | Si511 | 25MHz | 3.3V | ±25ppm |
| 511FCA100M000BAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±20ppm |
| 511BCA100M000BAG | Silicon Labs | Si511 | 100MHz | 3.3V | ±20ppm |
| 530BA125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±50ppm |
| 531FB125M000DG | Silicon Labs | Si531 | 125MHz | 2.5V | ±20ppm |
| 530BB100M000DG | Silicon Labs | Si530 | 100MHz | 3.3V | ±20ppm |
| 530FC156M250DG | Silicon Labs | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 510ABA125M000BAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511BBA74M2500BAG | Silicon Labs | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA156M250BAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 511ABA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA200M000BAG | Silicon Labs | Si510 | 200MHz | 2.5V | ±25ppm |
| 510ABA200M000BAG | Silicon Labs | Si510 | 200MHz | 3.3V | ±25ppm |
| 530FA156M250DG | Silicon Labs | Si530 | 156.25MHz | 2.5V | ±50ppm |
| 531BC000110DG | Silicon Labs | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 535FB125M000DG | Silicon Labs | Si535 | 125MHz | 2.5V | ±20ppm |
| SI50122-A4-GM | Silicon Labs | SI50122-A4 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
| 511ABA156M250AAGR | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 530FC125M000DG | Silicon Labs | Si530 | 125MHz | 2.5V | ±7ppm |
| 531BC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC250M000DG | Silicon Labs | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC622M080DG | Silicon Labs | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 511FBA100M000BAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 510BBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510ABA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 531BC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
| 530AC125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±7ppm |
| 531FB106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±20ppm |
| 531AC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC148M500DG | Silicon Labs | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 531BC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 530FC200M000DG | Silicon Labs | Si530 | 200MHz | 2.5V | ±7ppm |
| 536BB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 536FB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536AB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 510FBA125M000BAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
| 511BBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA100M000BAG | Silicon Labs | Si510 | 100MHz | 2.5V | ±25ppm |
| 511FBA106M250BAG | Silicon晶振 | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510BBA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA125M000AAG | Silicon Labs | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250AAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 510FBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510BBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510ABA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510DBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 531AC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
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NKG有源晶振,SCH3高速网络晶振,SCH36B100.000MTS-EXT,7050mm,NKG振荡器,石英晶体振荡器,六脚有源振荡器,OSC晶振,有源贴片晶振,有源晶体振荡器,100MHZ有源晶振,7050mm微型晶振,尺寸7.0×5.0mm,频率100MHZ,电压3.3V,输出LVCMOS,低抖动晶振,低相位晶振,低相噪晶振,低老化晶振,无线局域网晶振,高速网络晶振.
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