Silicon晶体振荡器\530EC156M250DG\Si530欧美晶体\6G无线网络晶振，尺寸7.00mmx5.00mm，频率156.25MHZ，支持输出LVPECL，XO时钟振荡器（标准），电压 2.5V，脚位6-SMD，六脚贴片晶振，有源晶振，有源贴片晶振，LVPECL输出晶振，差分晶振LV-PECL，贴片差分晶振，差分晶体振荡器，低电压差分晶振，低功耗差分晶振，低相位差分晶振，低抖动差分晶振，网络应用差分晶振，高清视频差分晶振，测试测量专用差分晶振，具有低抖动低电压的特点，产品十分适合用于SONET/SDH，网络 标清/高清视频，测试和测量，时钟和数据恢复，FPGA/ASIC时钟生成等领域。
基于Si530/531 IC的XO有源晶体振荡器可在工厂进行配置对于包括频率、电源电压、电源电压等的各种各样的用户规范，输出格式和温度稳定性。具体配置为出厂配置在装运时进行编程，从而消除长交付周期与定制振荡器相关。Silicon晶体振荡器\530EC156M250DG\Si530欧美晶体\6G无线网络晶振.
Silicon晶体振荡器\530EC156M250DG\Si530欧美晶体\6G无线网络晶振参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | ||||||||||||||||||
| CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
| Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
| Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
| Powerup Time4 | tOSC | 10 | ms | |||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | VDD– 1.30 | V | ||||||||||||||||||||
| 1.8 V option mid-level | VDD– 0.36 | V | ||||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
| CMOS Output Option3 | VOH | IOH= 32 mA | 0.8 x VDD | VDD | V | |||||||||||||||||||
| VOL | IOL= 32 mA | 0.4 | V | |||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,tF | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
VDD– 1.3 V 1.25 V (diff) VDD/2 |
45 | 55 | % | ||||||||||||||||||
Silicon晶体振荡器\530EC156M250DG\Si530欧美晶体\6G无线网络晶振 尺寸图
OSC晶振产品特性：
可用于任何速率的输出
频率从10兆赫到945兆赫
并选择1.4 GHz的频率
集成superior的第三代DSPLL 抖动性能
频率稳定性比高3倍
基于SAW的振荡器
内部固定晶振频率
确保高可靠性和低老化
可用的CMOS、LVPECL、 LVDS和CML输出 3.3、2.5和1.8 V电源选项
行业标准5 x 7毫米
封装和引脚排列
无铅/符合RoHS标准
更多相关美国Silicon晶振型号
欧美晶振原厂代码
Manufacturer品牌
Series型号
Frequency 频率
Voltage - Supply电压
Frequency Stability频率稳定度
531EC155M520DG
Silicon振荡器
Si531
155.52MHz
2.5V
±7ppm
530EC187M500DG
Silicon振荡器
Si530
187.5MHz
2.5V
±7ppm
531AC187M500DG
Silicon振荡器
Si531
187.5MHz
3.3V
±7ppm
531EC187M500DG
Silicon振荡器
Si531
187.5MHz
2.5V
±7ppm
530AC000110DG
Silicon振荡器
Si530
148.35165MHz
3.3V
±7ppm
530AC148M500DG
Silicon振荡器
Si530
148.5MHz
3.3V
±7ppm
530EC000110DG
Silicon振荡器
Si530
148.35165MHz
2.5V
±7ppm
530FC000110DG
Silicon振荡器
Si530
148.35165MHz
2.5V
±7ppm
531EC000110DG
Silicon振荡器
Si531
148.35165MHz
2.5V
±7ppm
531EC148M500DG
Silicon振荡器
Si531
148.5MHz
2.5V
±7ppm
530BC155M520DG
Silicon振荡器
Si530
155.52MHz
3.3V
±7ppm
530EC156M250DG
Silicon振荡器
Si530
156.25MHz
2.5V
±7ppm
530AC187M500DG
Silicon振荡器
Si530
187.5MHz
3.3V
±7ppm
530BC187M500DG
Silicon振荡器
Si530
187.5MHz
3.3V
±7ppm
530FC187M500DG
Silicon振荡器
Si530
187.5MHz
2.5V
±7ppm
530EC148M500DG
Silicon振荡器
Si530
148.5MHz
2.5V
±7ppm
530EC200M000DG
Silicon振荡器
Si530
200MHz
2.5V
±7ppm
531FC155M520DG
Silicon振荡器
Si531
155.52MHz
2.5V
±7ppm
531EC156M250DG
Silicon振荡器
Si531
156.25MHz
2.5V
±7ppm
530FC155M520DG
Silicon振荡器
Si530
155.52MHz
2.5V
±7ppm
530BC000110DG
Silicon振荡器
Si530
148.35165MHz
3.3V
±7ppm
530FC148M500DG
Silicon振荡器
Si530
148.5MHz
2.5V
±7ppm
536AB125M000DG
Silicon振荡器
Si536
125MHz
3.3V
±20ppm
535EB125M000DG
Silicon振荡器
Si535
125MHz
2.5V
±20ppm
536EB125M000DG
Silicon振荡器
Si536
125MHz
2.5V
±20ppm
535BB125M000DG
Silicon振荡器
Si535
125MHz
3.3V
±20ppm
535BB156M250DG
Silicon振荡器
Si535
156.25MHz
3.3V
±20ppm
535FB156M250DG
Silicon振荡器
Si535
156.25MHz
2.5V
±20ppm
530EC312M500DG
Silicon振荡器
Si530
312.5MHz
2.5V
±7ppm
530BC250M000DG
Silicon晶振
Si530
250MHz
3.3V
±7ppm
530EC311M040DG
Silicon振荡器
Si530
311.04MHz
2.5V
±7ppm
530FC311M040DG
Silicon振荡器
Si530
311.04MHz
2.5V
±7ppm
530FC622M080DG
Silicon振荡器
Si530
622.08MHz
2.5V
±7ppm
531AC311M040DG
Silicon振荡器
Si531
311.04MHz
3.3V
±7ppm
531BC311M040DG
Silicon振荡器
Si531
311.04MHz
3.3V
±7ppm
531EC311M040DG
Silicon振荡器
Si531
311.04MHz
2.5V
±7ppm
531EC622M080DG
Silicon振荡器
Si531
622.08MHz
2.5V
±7ppm
531FC622M080DG
Silicon振荡器
Si531
622.08MHz
2.5V
±7ppm
531FC311M040DG
Silicon振荡器
Si531
311.04MHz
2.5V
±7ppm
530BC311M040DG
Silicon振荡器
Si530
311.04MHz
3.3V
±7ppm
531BC622M080DG
Silicon振荡器
Si531
622.08MHz
3.3V
±7ppm
531FC312M500DG
Silicon振荡器
Si531
312.5MHz
2.5V
±7ppm
530EC622M080DG
Silicon振荡器
Si530
622.08MHz
2.5V
±7ppm
531EC312M500DG
Silicon振荡器
Si531
312.5MHz
2.5V
±7ppm
530BC622M080DG
Silicon振荡器
Si530
622.08MHz
3.3V
±7ppm
531AC250M000DG
Silicon振荡器
Si531
250MHz
3.3V
±7ppm
530AC311M040DG
Silicon振荡器
Si530
311.04MHz
3.3V
±7ppm
530FC312M500DG
Silicon振荡器
Si530
312.5MHz
2.5V
±7ppm
531EC250M000DG
Silicon振荡器
Si531
250MHz
2.5V
±7ppm
530AC312M500DG
Silicon振荡器
Si530
312.5MHz
3.3V
±7ppm
530EC250M000DG
Silicon振荡器
Si530
250MHz
2.5V
±7ppm
530AC250M000DG
Silicon振荡器
Si530
250MHz
3.3V
±7ppm
530FC250M000DG
Silicon振荡器
Si530
250MHz
2.5V
±7ppm
530BC312M500DG
Silicon振荡器
Si530
312.5MHz
3.3V
±7ppm
531BC312M500DG
Silicon振荡器
Si531
312.5MHz
3.3V
±7ppm
530FC50M0000DG
Silicon振荡器
Si530
50MHz
2.5V
±7ppm
535AB125M000DG
Silicon振荡器
Si535
125MHz
3.3V
±20ppm
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