86-0755-27838351

频率:125MHZ
尺寸:5.00mmx3.20mm
Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振,尺寸为5.00mmx3.20mm,频率125MHZ,电压为3.3V,频率稳定性25ppm.输出为LVPECL,美国Silicon晶振,差分贴片晶振,LVPECL输出晶振,差分晶体振荡器,石英晶体振荡器,有源贴片晶振,SMD振荡器,低功耗差分振荡器,XO时钟振荡器,低电压晶振,低相噪振荡器,低相位差分晶振,低抖动差分晶振,5032mm有源晶振,产品具有低功耗低抖动低相位的特点。
有源晶振产品主要应用范围十分广泛,主要应用于SONET/SDH/OTN网络,千兆以太网,光纤通道/SAS/SATA,PCI Express总线,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等领域.Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振.
Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振,尺寸为5.00mmx3.20mm,频率125MHZ,电压为3.3V,频率稳定性25ppm.输出为LVPECL,美国Silicon晶振,差分贴片晶振,LVPECL输出晶振,差分晶体振荡器,石英晶体振荡器,有源贴片晶振,SMD振荡器,低功耗差分振荡器,XO时钟振荡器,低电压晶振,低相噪振荡器,低相位差分晶振,低抖动差分晶振,5032mm有源晶振,产品具有低功耗低抖动低相位的特点。
有源晶振产品主要应用范围十分广泛,主要应用于SONET/SDH/OTN网络,千兆以太网,光纤通道/SAS/SATA,PCI Express总线,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等领域.Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振.
Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | |||||||||||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | |||||||||||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | |||||||||||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | |||||||||||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | |||||||||||||||||||
| OE "1" Setting | VIH | See Note | 0.80 x V DD | — | — | V | |||||||||||||||||
| OE "0" Setting | VIL | See Note | — | — | 0.20 x V DD | V | |||||||||||||||||
|
OE Internal Pull-Up/Pull- Down Resistor* |
RI | — | 45 | — | kΩ | ||||||||||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | |||||||||||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | |||||||||||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | |||||||||||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | |||||||||||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | |||||||||||||||||||
| OE "1" Setting | VIH | See Note | 0.80 x V DD | — | — | V | |||||||||||||||||
| OE "0" Setting | VIL | See Note | — | — | 0.20 x V DD | V | |||||||||||||||||
|
OE Internal Pull-Up/Pull- Down Resistor* |
RI | — | 45 | — | kΩ | ||||||||||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
|
CMOS Output Logic High |
V OH | 0.85 x V DD | — | — | V | ||||||||||||||||||
|
CMOS Output Logic Low |
VOL | — | — | 0.15 x V DD | V | ||||||||||||||||||
|
CMOS Output Logic High Drive |
I OH | 3.3 V | –8 | — | — | mA | |||||||||||||||||
| 2.5 V | –6 | — | — | mA | |||||||||||||||||||
| 1.8 V | –4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Logic Low Drive |
I OL | 3.3 V | 8 | — | — | mA | |||||||||||||||||
| 2.5 V | 6 | — | — | mA | |||||||||||||||||||
| 1.8 V | 4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Rise/Fall Time (20 to 80% V DD) |
TR/T F |
0.1 to 212.5 MHz, CL = 15 pF |
0.45 | 0.8 | 1.2 | ns | |||||||||||||||||
|
0.1 to 212.5 MHz, CL = no load |
0.3 | 0.6 | 0.9 | ns | |||||||||||||||||||
|
LVPECL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 565 | ps | ||||||||||||||||||
|
HCSL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 470 | ps | ||||||||||||||||||
|
LVDS Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 350 | — | 800 | ps | ||||||||||||||||||
|
LVPECL Output Common Mode |
VOC |
50 Ω to V DD – 2 V, single-ended |
— |
V DD – 1.4 V |
— | V | |||||||||||||||||
| LVPECL Output Swing | VO |
50 Ω to V DD – 2 V, single-ended |
0.55 | 0.8 | 0.90 | VPPSE | |||||||||||||||||
|
LVDS Output Common Mode |
VOC |
100 Ω line-line V DD= 3.3/2.5 V |
1.13 | 1.23 | 1.33 | V | |||||||||||||||||
| 100 Ω line-line, V DD= 1.8 V | 0.83 | 0.92 | 1.00 | V | |||||||||||||||||||
| LVDS Output Swing | VO |
Single-ended, 100 Ω differential termination |
0.25 | 0.35 | 0.45 | VPPSE | |||||||||||||||||
|
HCSL Output Common Mode |
VOC | 50 Ω to ground | 0.35 | 0.38 | 0.42 | V | |||||||||||||||||
| HCSL Output Swing | VO | Single-ended | 0.58 | 0.73 | 0.85 | VPPSE | |||||||||||||||||
| Duty Cycle | DC | All formats | 48 | 50 | 52 | % | |||||||||||||||||
Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振 尺寸图
差分晶振产品特性:
支持来自的任何频率100kHz至250MHz
低抖动操作
完全稳定包括10年老化
全面的生产测试
电源噪声滤波 3.3、2.5或1.8V工作电压差异(LVPECL,LVDS, HCSL)或CMOS输出选项
可选集成1:2CMOS扇出缓冲器
行业标准5x7、3.2x5、 和2.5x3.2毫米封装
无铅,符合RoHS标准
–40至85摄氏度操作
更多相关Silicon晶振型号
| Manufacturer Part Number原厂代码 | 晶振厂家 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
| 530BA125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±50ppm |
| 531FB125M000DG | Silicon Labs | Si531 | 125MHz | 2.5V | ±20ppm |
| 530BB100M000DG | Silicon Labs | Si530 | 100MHz | 3.3V | ±20ppm |
| 530FC156M250DG | Silicon Labs | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 510ABA125M000BAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511BBA74M2500BAG | Silicon Labs | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA156M250BAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 511ABA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA200M000BAG | Silicon Labs | Si510 | 200MHz | 2.5V | ±25ppm |
| 510ABA200M000BAG | Silicon Labs | Si510 | 200MHz | 3.3V | ±25ppm |
| 530FA156M250DG | Silicon Labs | Si530 | 156.25MHz | 2.5V | ±50ppm |
| 531BC000110DG | Silicon Labs | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 535FB125M000DG | Silicon Labs | Si535 | 125MHz | 2.5V | ±20ppm |
| SI50122-A4-GM | Silicon Labs | SI50122-A4 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
| 511ABA156M250AAGR | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 530FC125M000DG | Silicon Labs | Si530 | 125MHz | 2.5V | ±7ppm |
| 531BC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC250M000DG | Silicon Labs | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC622M080DG | Silicon Labs | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 511FBA100M000BAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 510BBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510ABA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 531BC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
| 530AC125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±7ppm |
| 531FB106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±20ppm |
| 531AC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC148M500DG | Silicon Labs | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 531BC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 530FC200M000DG | Silicon Labs | Si530 | 200MHz | 2.5V | ±7ppm |
| 536BB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 536FB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536AB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 510FBA125M000BAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
| 511BBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA100M000BAG | Silicon Labs | Si510 | 100MHz | 2.5V | ±25ppm |
| 511FBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510BBA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA125M000AAG | Silicon Labs | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250AAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 510FBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA156M250BAG | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510BBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510ABA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |

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SiT9025AI-22-33ED16.000000,SITIME陶瓷晶振,3225车规晶振,16MHz输出,满足AEC-Q100车规认证.产品自带扩频时钟功能,可灵活调节信号升降沿,有效降低系统EMI干扰,工作温度覆盖-40℃~125℃,抗振动,抗冲击性能远超传统石英晶振.采用3.3V晶振供电,LVCMOS输出,可直接兼容原有石英晶振PCB,无需改版.广泛用于车载摄像头,车载中控,ADAS等汽车电子场景,稳定性±25ppm.康华尔电子支持样品申请,批量供货,欢迎来电咨询0755-27838351.
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