SiTime32.768K有源晶振,SiT1630AI-H4-DCC-32.768S,WiFi模块6G晶振,尺寸2.0x1.2mm,频率32.768KHZ,可编程有源振荡器,欧美有源晶振,32.768KHZ有源晶振,有源贴片晶振,OSC贴片晶振,SMD振荡器,陶瓷面振荡器,2012mm有源振荡器,工业计时专用晶振,蓝牙模块晶振,WiFi模块专用晶振,工业电池管理晶振,RTC参考时钟专用晶振,低功耗有源晶振,低电压有源晶振,低耗能有源晶振,低相位有源晶振,高质量有源晶振,高性能有源晶振,具有良好的可靠性能。
32.768K晶振产品超级适合用于工业计时,工业电池管理,多点32 kHz时钟分布,蓝牙模块,WiFi模块,RTC参考时钟等领域。SiTime32.768K有源晶振,SiT1630AI-H4-DCC-32.768S,WiFi模块6G晶振.
SiTime32.768K有源晶振,SiT1630AI-H4-DCC-32.768S,WiFi模块6G晶振 参数表
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency and Stability
Output Frequency
Fout
32.768 or
16.384
kHz
Frequency Stability
Initial Tolerance[2]
F_init
20
ppm
TA= 25°C, post reflow, Vdd: 1.5V – 3.63V.
Frequency Stability Over
Temperature[3]
F_stab
75
ppm
TA= - 10°C to +70°C, Vdd: 1.5V – 3.63V.
100
TA= -40°C to +85°C, Vdd: 1.5V – 3.63V.
150
TA= -40°C to +105°C, -55°C to +85C, Vdd: 1.8V – 3.63V.
25°C Aging
- 1
1
ppm
1stYear
Supply Voltage and Current Consumption
Operating Supply Voltage
Vdd
1.5
3.63
V
TA= over temperature
Operating Current
2Idd
1.0
μA
TA= 25°C, Vdd: 1.5V – 3.3V. No load
1.3
TA= - 10°C to +70°C, Vdd max: 3.63V. No load
1.4
TA= -40°C to +85°C, Vdd max: 3.63V. No load
2.80
TA= -40°C to +105°C, Vdd max: 3.63V. No load
Power-Supply Ramp
t_Vdd
Ramp
100
ms
Over temperature, 0 to 90% Vdd
Start-up Time at Power-up
T_start
180
300
ms
-40°C ≤ TA≤ 50°C, valid output
450
-40°C ≤ TA≤ 85°C, valid output
500 + 1
period
TA= - 55°C and +105°C
Operating Temperature Range
Commercial Temperature
T_opn
- 10
70
°C
Temp code “C” in part number ordering
Industrial Temperature
-40
85
Temp code “I” in part number ordering
Extended IndustrialTemperature
-40
105
Temp code “E” in part number ordering.
Extended Cold Industrial Temperature
-55
85
Temp Code “D” in part number ordering.
Automotive Temperature Range
-55
105
ContactSiTimefor Availability
LVCMOS Output, TA= Over Temperature, typical values are at TA= 25°C
Output Rise/Fall Time
tr, tf
100
200
ns
10-90%, 15 pF load, Vdd = 1.5V to 3.63V
10-90% (Vdd), 5 pF load, Vdd ≥ 1.62V
Output Clock Duty Cycle
DC
48
52
%
Output Voltage High
VOH
90%
V
Vdd: 1.5V – 3.63V. IOH= - 10 μA, 15 pF
Output Voltage Low
VOL
10%
V
Vdd: 1.5V – 3.63V. IOL= 10 μA, 15 pF
Maximum Output Drive
50
pF
≥80% LVCMOSswing, TA= over temperature, Vdd = 1.5V to 3.3V
Period Jitter
T_jitt
35
nsRMS
Cycles = 10,000, TA= 25°C
SiTime32.768K有源晶振,SiT1630AI-H4-DCC-32.768S,WiFi模块6G晶振 尺寸图
SiTime32.768K有源晶振,SiT1630AI-H4-DCC-32.768S,WiFi模块6G晶振
有源晶振产品特点:
<20ppm初始公差
<在-40°C至+85°C范围内的100 ppm稳定性
小型SMD封装:2.0 x 1.2 mm(2012)[1]
SOT23-5工业和汽车应用
超低功率:典型值1.0µA
Vdd供电范围:1.5V至3.63V
广泛的工作温度范围选项
内部滤波消除了外部Vdd旁路电容器
无铅,符合RoHS和REACH