全球首家上百万进口晶振代理商

深圳市康华尔电子有限公司

国际进口晶振品牌首选康华尔

首页 Silicon晶振

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器

产品简介

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器,美国Silicon晶振,欧美有源晶振,六脚有源晶振,156.25MHZ晶体振荡器,Si514晶振,7050mm振荡器,XO振荡器,OSC晶振,有源晶体振荡器,尺寸7050mm,频率156.25MHZ,电压2.5V,低电压晶振,低功耗晶振,低相位晶振,数据通信晶振,工业自动化晶振,测试设备晶振,数字设备晶振,通信模块晶振,物联网晶振.

产品详情

1

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器,美国Silicon晶振,欧美有源晶振,六脚有源晶振,156.25MHZ晶体振荡器,Si514晶振,7050mm振荡器,XO振荡器,OSC晶振,有源晶体振荡器,尺寸7050mm,频率156.25MHZ,电压2.5V,低电压晶振,低功耗晶振,低相位晶振,数据通信晶振,工业自动化晶振,测试设备晶振,数字设备晶振,通信模块晶振,物联网晶振.

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器特点:

可编程到任何频率从100kHz到250MHz

00.026 ppb频率调谐决议

OOE上的闪光抑制，电源on和频率转换

低抖动操作，2到4周的交付周期,总体稳定性包括10年变老

综合生产试验，覆盖范围包括晶体ESR和DLD

用于电源的片上LDO噪声滤波

3.3、2.5或1.8 V操作，差分（LVPECL、LVDS、HCSL）或CMOS输出选项

可选集成1:2 CMOS扇出缓存有源晶振

行业标准5x7、3.2x5和2.5x3.2 mm包装,–40至85℃操作

2

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器 参数表

Parameter Symbol Test Condition Min Typ Max Units
Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V
2.5 V option 2.25 2.5 2.75 V
1.8 V option 1.71 1.8 1.89 V
Supply Current IDD CMOS, 100 MHz,
single-ended 		— 21 26 mA
LVDS
(output enabled) 		— 19 23 mA
LVPECL
(output enabled) 		— 39 43 mA
HCSL
(output enabled) 		— 41 44 mA
Tristate
(output disabled) 		— — 18 mA
Operating Temperature TA –40 — 85 oC
Parameter Symbol Test Condition Min Typ Max Units
SDA, SCL Input Voltage High VIH 0.80 x VDD — — V
SDA, SCL Input Voltage Low VIL — — 0.20 x VDD V
Parameter Symbol Test Condition Min Typ Max Units
Programmable
Frequency Range 		FO CMOS, Dual CMOS 0.1 — 212.5 MHz
FO LVDS/LVPECL/HCSL 0.1 — 250 MHz
Frequency
Reprogramming
Resolution 		MRES — 0.026 — ppb
Frequency Range for
Small Frequency Change
(Continuous Glitchless
Output) 		From center frequency –1000 — +1000 ppm
Settling time for Small
Frequency Change 		<±1000 ppm from
center frequency 		— — 100 µs
Settling time for Large
Frequency Change (Out-
put Squelched during Fre-
quency Transition) 		>±1000 ppm from
center frequency 		— — 10 ms
Total Stability* Frequency Stability Grade C –30 — +30 ppm
Frequency Stability Grade B –50 — +50 ppm
Frequency Stability Grade A –100 — +100 ppm
Temperature Stability Frequency Stability Grade C –20 — +20 ppm
Frequency Stability Grade B –25 — +25 ppm
Frequency Stability Grade A –50 — +50 ppm
Startup Time TSU Minimum VDDuntil output
frequency (FO) within specification 		— — 10 ms
Disable Time TD FO< 10 MHz — — 40 µs
FO>10 MHz — — 5 µs
Enable Time TE FO< 10 MHz — — 60 µs
FO>10 MHz — — 20 µs
3

Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封装振荡器尺寸图

Si514 7050

Si514 1

Si514 2

Si514 3

原厂代码 品牌 型号 频率 电压 频率稳定度
530AC312M500DG Silicon振荡器 Si530 312.5MHz 3.3V ±7ppm
530EC250M000DG Silicon振荡器 Si530 250MHz 2.5V ±7ppm
530AC250M000DG Silicon振荡器 Si530 250MHz 3.3V ±7ppm
530FC250M000DG Silicon振荡器 Si530 250MHz 2.5V ±7ppm
530BC312M500DG Silicon振荡器 Si530 312.5MHz 3.3V ±7ppm
530FC50M0000DG Silicon振荡器 Si530 50MHz 2.5V ±7ppm
530AA156M250DG Silicon振荡器 Si530 156.25MHz 3.3V ±50ppm
530FB100M000DG Silicon振荡器 Si530 100MHz 2.5V ±20ppm
530BC125M000DG Silicon振荡器 Si530 125MHz 3.3V ±7ppm
530EC125M000DG Silicon振荡器 Si530 125MHz 2.5V ±7ppm
591BB300M000DG Silicon振荡器 Si591 300MHz 3.3V ±25ppm
530CA28M6000DG Silicon振荡器 Si530 28.6MHz 3.3V ±50ppm
530AC125M000DGR Silicon振荡器 Si530 125MHz 3.3V ±7ppm
530BC125M000DGR Silicon振荡器 Si530 125MHz 3.3V ±7ppm
530EC125M000DGR Silicon振荡器 Si530 125MHz 2.5V ±7ppm
530AC106M250DGR Silicon振荡器 Si530 106.25MHz 3.3V ±7ppm
530BC106M250DGR Silicon振荡器 Si530 106.25MHz 3.3V ±7ppm
530EC106M250DGR Silicon振荡器 Si530 106.25MHz 2.5V ±7ppm
530FC106M250DGR Silicon振荡器 Si530 106.25MHz 2.5V ±7ppm
530BC25M0000DGR Silicon振荡器 Si530 25MHz 3.3V ±7ppm
514GBB000118AAG Silicon振荡器 Si514 156.25MHz 2.5V ±25ppm
530RB150M000DG Silicon振荡器 Si530 150MHz 2.5V ±20ppm
530RB200M000DG Silicon振荡器 Si530 200MHz 2.5V ±20ppm
530BC100M000DG Silicon振荡器 Si530 100MHz 3.3V ±20ppm
530AC155M520DGR Silicon振荡器 Si530 155.52MHz 3.3V ±7ppm
530AC156M250DGR Silicon振荡器 Si530 156.25MHz 3.3V ±7ppm
530BC155M520DGR Silicon振荡器 Si530 155.52MHz 3.3V ±7ppm
530BC156M250DGR Silicon振荡器 Si530 156.25MHz 3.3V ±7ppm
530EC155M520DGR Silicon振荡器 Si530 155.52MHz 2.5V ±7ppm
530EC156M250DGR Silicon振荡器 Si530 156.25MHz 2.5V ±7ppm
530FC155M520DGR Silicon振荡器 Si530 155.52MHz 2.5V ±7ppm
530FC156M250DGR Silicon振荡器 Si530 156.25MHz 2.5V ±7ppm
530AC187M500DGR Silicon振荡器 Si530 187.5MHz 3.3V ±7ppm
530BC187M500DGR Silicon振荡器 Si530 187.5MHz 3.3V ±7ppm
530EC187M500DGR Silicon振荡器 Si530 187.5MHz 2.5V ±7ppm
530FC187M500DGR Silicon振荡器 Si530 187.5MHz 2.5V ±7ppm
530AC000110DGR Silicon振荡器 Si530 148.35165MHz 3.3V ±7ppm
530AC148M500DGR Silicon振荡器 Si530 148.5MHz 3.3V ±7ppm
530AC200M000DGR Silicon振荡器 Si530 200MHz 3.3V ±7ppm
530BC000110DGR Silicon振荡器 Si530 148.35165MHz 3.3V ±7ppm
530BC148M500DGR Silicon振荡器 Si530 148.5MHz 3.3V ±7ppm
530BC200M000DGR Silicon振荡器 Si530 200MHz 3.3V ±7ppm
530EC000110DGR Silicon振荡器 Si530 148.35165MHz 2.5V ±7ppm
530EC148M500DGR Silicon振荡器 Si530 148.5MHz 2.5V ±7ppm
530EC200M000DGR Silicon振荡器 Si530 200MHz 2.5V ±7ppm
530FC000110DGR Silicon振荡器 Si530 148.35165MHz 2.5V ±7ppm
530FC148M500DGR Silicon振荡器 Si530 148.5MHz 2.5V ±7ppm
530BC130M250DG Silicon振荡器 Si530 130.25MHz 3.3V ±7ppm
530BC154M000DG Silicon振荡器 Si530 154MHz 3.3V ±7ppm
530AC312M500DGR Silicon振荡器 Si530 312.5MHz 3.3V ±7ppm
530BC312M500DGR Silicon振荡器 Si530 312.5MHz 3.3V ±7ppm
530EC312M500DGR Silicon振荡器 Si530 312.5MHz 2.5V ±7ppm
530FC312M500DGR Silicon振荡器 Si530 312.5MHz 2.5V ±7ppm
530AC250M000DGR Silicon振荡器 Si530 250MHz 3.3V ±7ppm
530AC311M040DGR Silicon晶振 Si530 311.04MHz 3.3V ±7ppm
530AC622M080DGR Silicon振荡器 Si530 622.08MHz 3.3V ±7ppm
530BC250M000DGR Silicon振荡器 Si530 250MHz 3.3V ±7ppm
530BC311M040DGR Silicon振荡器 Si530 311.04MHz 3.3V ±7ppm
530BC622M080DGR Silicon振荡器 Si530 622.08MHz 3.3V ±7ppm
530EC250M000DGR Silicon振荡器 Si530 250MHz 2.5V ±7ppm
530EC311M040DGR Silicon振荡器 Si530 311.04MHz 2.5V ±7ppm
530EC622M080DGR Silicon振荡器 Si530 622.08MHz 2.5V ±7ppm
530FC250M000DGR Silicon振荡器 Si530 250MHz 2.5V ±7ppm
530FC311M040DGR Silicon振荡器 Si530 311.04MHz 2.5V ±7ppm
530FC622M080DGR Silicon振荡器 Si530 622.08MHz 2.5V ±7ppm
530CA40M0000BG Silicon振荡器 Si530 40MHz 3.3V ±50ppm

5

上一页 余下全文

1/5

关于“欧美有源晶振,六脚有源晶振,156.25MHZ晶体振荡器,Si514晶振,7050mm时钟振荡器,XO振荡器,OSC贴片晶振”的相关产品

XO-53000H无线模块晶振,XO-53331HST-LF-45.000MHz,KVG低电压振荡器XO-53000H无线模块晶振,XO-53331HST-LF-45.000MHz,KVG低电压振荡器Microchip高频晶振,DSC1124BI1-100.0000,MEMS振荡器,5032mm,100MHZMicrochip高频晶振,DSC1124BI1-100.0000,MEMS振荡器,5032mm,100MHZ

Si531,531EC156M250DGR,7050mm,Silicon晶体振荡器,156.25MHZSi531,531EC156M250DGR,7050mm,Silicon晶体振荡器,156.25MHZ590DA156M250DG,Si590,Silicon测量晶振,156.25MHZ,7050mm590DA156M250DG,Si590,Silicon测量晶振,156.25MHZ,7050mm

Si591网络晶振,Silicon振荡器,591BB300M000DG,3.3V,7050mm,300MHZSi591网络晶振,Silicon振荡器,591BB300M000DG,3.3V,7050mm,300MHZSX3C-18F20EH-36MHz,FCD-Tech低电压晶振,3225mm,36MHZ,CMOSSX3C-18F20EH-36MHz,FCD-Tech低电压晶振,3225mm,36MHZ,CMOS

CMOS振荡器,3225mm,SX3CG-18K10E-52MHz,FCD-Tech低相噪晶振,52MHZCMOS振荡器,3225mm,SX3CG-18K10E-52MHz,FCD-Tech低相噪晶振,52MHZSX3KL系列,CMOS振荡器,SX3KL-18K30E-32.768kHz,3225mm,FCD-Tech便携式电子晶振SX3KL系列,CMOS振荡器,SX3KL-18K30E-32.768kHz,3225mm,FCD-Tech便携式电子晶振

CMOS,FCD-Tech移动设备晶振,SX5CB-15F00E-32MHz,5032mm,32MHZ振荡器CMOS,FCD-Tech移动设备晶振,SX5CB-15F00E-32MHz,5032mm,32MHZ振荡器1XXB16368MAA晶振,DSB221SDN,温补晶体振荡器,2520石英晶振1XXB16368MAA晶振,DSB221SDN,温补晶体振荡器,2520石英晶振

热点推荐

无线蓝牙最佳之选为SMD晶振ECS-240-18-33-JEN-TR3非常适合无线和便携式设备应用的石英晶体CX1612Z-A0-B3C3-150-16.0D12全球定位系统主流的高温石英晶体ABS07AIG-32.768KHZ-1-T多伏振荡器ECS-2016MVQ-250-CN-TR非常适合工业和汽车应用时钟晶体振荡器625L3I008M00000为何对于无线通信如此重要?

网友热评