86-0755-27838351
适合用于时钟应用的OSC有源振荡器X1G005591026500,石英晶体振荡器,有源贴片晶振中使用的石英晶体是一块非常小的、薄的石英切割片或晶片,其两个平行表面被金属化以进行所需的电连接。一块石英晶体的物理尺寸和厚度受到严格控制,因为它会影响振荡的最终频率或基本频率。基频一般称为晶体的“特征频率”。一旦切割和成型,晶体就不能在任何其他频率下使用。换句话说,石英晶体的大小和形状决定了石英晶体振荡器的基本振荡频率。
适合用于时钟应用的OSC有源振荡器X1G005591026500,石英晶振荡器体是一种各向异性晶体。 它由以特定方位角切割的薄片制成,然后在晶片的相应表面上涂有银。 安装一对金属块作为极板,构成石英有源晶体振荡器 。 石英晶体可用作振荡电路的原因在于其压电效应。 当在晶片外部的两个板之间添加电场时,晶体将产生机械变形; 相反,当在板之间施加机械力时,将在晶体中产生电场。 这种现象称为压电效应。
Product Number |
爱普生晶振型号 |
Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005591025400 | SG-8018CE | 2.444400 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025500 | SG-8018CE | 13.977600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025600 | SG-8018CE | 75.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591025700 | SG-8018CE | 13.516800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591025800 | SG-8018CE | 64.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591025900 | SG-8018CE | 9.830400 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026000 | SG-8018CE | 29.491200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591026100 | SG-8018CE | 37.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591026200 | SG-8018CE | 16.384000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026300 | SG-8018CE | 135.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005591026400 | SG-8018CE | 64.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026500 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026600 | SG-8018CE | 12.288000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591026700 | SG-8018CE | 60.956200 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026800 | SG-8018CE | 52.441700 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591026900 | SG-8018CE | 65.794020 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027000 | SG-8018CE | 14.745600 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027100 | SG-8018CE | 16.500000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027200 | SG-8018CE | 7.372800 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005591027300 | SG-8018CE | 35.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591027400 | SG-8018CE | 64.800000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027500 | SG-8018CE | 33.300000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005591027600 | SG-8018CE | 66.667000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005591027700 | SG-8018CE | 15.625000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |