爱普生有源晶振X1G005591030700和无源晶振振动频率区别
当外加交变电压的频率与晶片的固有频率由晶片的尺寸和形状决定相等时,机械振动的幅度将急剧增加,这种现象称为压电谐振.压电谐振状态的建立和维持都必须借助于振荡器电路才能实现.爱普生贴片晶振是一个串联型振荡器,晶体管T1和T2构成的两级放大器,石英晶体XT与电容C2构成LC电路.在这个电路中石英晶体相当于一个电感,C2为可变电容器,调节其容量即可使电路进入谐振状态.
爱普生OSC晶振,X1G005591030700有源XO晶振
爱普生有源晶振编码
型号
频率
长X宽X高
输出波
电源电压
工作温度
频差
最大值
X1G005591029100
SG-8018CE
20.160000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029200
SG-8018CE
47.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029300
SG-8018CE
11.400000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029400
SG-8018CE
52.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591029500
SG-8018CE
12.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029600
SG-8018CE
66.666600MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591029700
SG-8018CE
25.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591029800
SG-8018CE
10.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591029900
SG-8018CE
50.193300MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030000
SG-8018CE
13.330000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030100
SG-8018CE
27.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591030200
SG-8018CE
68.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030300
SG-8018CE
63.200000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591030400
SG-8018CE
3.840000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030500
SG-8018CE
20.971520MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591030600
SG-8018CE
4.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030700
SG-8018CE
8.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030800
SG-8018CE
7.159090MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591030900
SG-8018CE
2.048000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031000
SG-8018CE
25.600000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031100
SG-8018CE
30.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031200
SG-8018CE
32.500000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031300
SG-8018CE
22.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031400
SG-8018CE
4.915200MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031500
SG-8018CE
3.579546MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591031600
SG-8018CE
21.250000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591031700
SG-8018CE
3.612700MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
有源晶振电路原理及与无源晶振的联系与区别有源晶振电路及工作原理简述有源晶振是由石英晶体组成的,石英晶片之所以能当为振荡器使用,是基于它的压电效应：日产晶振在晶片的两个极上加一电场,会使晶体产生机械变形;在石英晶片上加上交变电压,晶体就会产生机械振动,同时机械变形振动又会产生交变电场,虽然这种交变电场的电压极其微弱,但其振动频率是十分稳定的.
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